Schottky barrier formation between GaAs( 110) and alkali metals
نویسندگان
چکیده
The mechanism responsible of the Schottky barrier formation is anaiysed by considering a monolayer deposition of Li. Na or K on GaAs(ll0). These cases are studied by means of a free parameter consistent molecular orbital method. Che~so~tion energies. adsorption sites and Schottky barrier heights are calculated and found to be in good agreement with the experimental evidence. Our results tend to give a strong support to the induced density of interface states model.
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